2sd880 npn silicon power transistors features ? with to-220 package ? power amplifier applications maximum ratings symbol rating rating unit v ceo collector-emitter voltage 60 v v cbo collector-base voltage 60 v v ebo emitter-base voltage 7 v i c collector current 3 a p c collector power dissipation 1.5 w t j junction temperature -55 to +150 t stg storage temperature -55 to +150 electrical characteristics @ 25 o c unless otherwise specified symbol parameter min type max units off characteristics v (br)ceo collector-emitter breakdown voltage (i c =50madc, i b =0) 60 --- --- vdc v (br)cbo collector-base breakdown voltage (i c =100uadc, i e =0) 60 --- --- vdc v (br)ebo emitter-base breakdown voltage (i e =100uadc, i c =0) 7 --- --- vdc i cbo collector-base cutoff current (v cb =60vdc,i e =0) --- --- 100 uadc i ebo emitter-base cutoff current (v eb =7vdc, i c =0) --- --- 100 uadc on characteristics h fe forward current transfer ratio (i c =500madc, v ce =5vdc) 60 --- 300 --- v ce(sat) collector-emitter saturation voltage (i c =3adc, i b =300madc) --- --- 1 vdc v be base-emitter voltage (i c =0.5adc,v ce =5vdc) --- --- 1 vdc f t transistor frequency (i c =500madc, v ce =5vdc) --- 3 --- mhz c ob collector output capacitance (v cb =10vdc, i e =0, f=1mhz) --- 70 --- pf t on turn on time --- 0.8 --- us t s storage time --- 1.5 --- us t f fall time i b1 =-i b2 =0.2a, i c =2a, v cc =30v, pw=20us --- 0.8 --- us classification of h fe(1) rank q y gr range 60-120 100-200 150-300 inches mm
a .560 .625 14 .22 15.88 b .380 .420 9.65 10.67 c .100 .135 2.54 3.43 d .230 .270 5.84 6.86 e .380 .420 9.65 10.67 f ------ .250 ------ 6.35 g .500 .580 12.70 14.73 h .090 .110 2.29 2.79 i .020 .045 0.51 1.14 j .012 .025 0.30 0.64 k .139 .161 3.53 4.09 l .140 .190 3.56 4.83 m .045 .055 1.14 1.40 n .080 .115 2.03 2.92 a b c k j i h g f e d n m l h to-220 pin pin 1. base pin 2. collector 1 2 3 pin 3. emitter
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